Toshiba announces a new generation of technologies and services for speeding the development and reducing the cost of System-on-Chip RF ICs. The technologies enable ICs with higher reliabilities than traditional System-in-Package alternatives while a ‘hybrid’ ASIC / COT flow model significantly reduces development risk. Toshiba’s latest RF-CMOS technologies and services support the integration of RF, analogue and complex digital baseband and processor functions into a single chip. As a result they are ideally suited to fabless chip makers looking to deliver advanced solutions for Near Field Communications, Wide Area Networks, digital broadcast, telemetry and many other wireless communications applications.
Available at the 130nm, 90nm, 65nm and 40nm process nodes, Toshiba’s RF technology combines mature baseline CMOS processes with a fully featured RF Process Design Kit (PDK). The 130nm, 90nm and 65nm processes are characterized by high f_t ratings of 90GHz, 140GHz and 180GHz respectively. The RF module enables on-chip integration of passive elements such as MIM capacitors; junction and MOSFET varactors; half-turn differential or symmetrical inductors; and mid-range poly resistors with zero temperature coefficients. Junction capacitors and parasitic devices such as NPN transistors are also available.
Wolfgang Patelay, Editor Print & Online 